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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10978301 B1

PDFFull Text
Date of Patent:
Apr. 13, 2021

Filed:

Aug. 31, 2018

Morphology of resist mask prior to etching

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ching-Yu Chang, Taipei, TW;

Jung-Hau Shiu, New Taipei, TW;

Wei-Ren Wang, New Taipei, TW;

Shing-Chyang Pan, Jhudong Township, TW;

Tze-Liang Lee, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Andres Munoz

Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0273 (2013.01); H01L 21/0206 (2013.01); H01L 21/0228 (2013.01); H01L 21/0275 (2013.01); H01L 21/0276 (2013.01); H01L 21/02205 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/31058 (2013.01); H01L 21/7684 (2013.01); H01L 21/76816 (2013.01); H01L 21/76846 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract

Embodiments provide a patterning process. A photoresist layer is patterned. At least portions of the photoresist layer are converted from an organic material to an inorganic material by a deposition process of a metal oxide. All or some of the patterned photoresist layer may be converted to a carbon-metal-oxide. A metal oxide crust may be formed over the patterned photoresist layer. After conversion, the patterned photoresist layer is used as an etch mask to etch an underlying layer.

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