The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2021

Filed:

Jun. 30, 2019
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Michael V Aquilino, Gansevoort, NY (US);

Daniel Jaeger, Saratoga Springs, NY (US);

Man Gu, Malta, NY (US);

Bradley Morgenfeld, Greenfield Center, NY (US);

Haiting Wang, Clifton Park, NY (US);

Kavya Sree Duggimpudi, Clifton Park, NY (US);

Wang Zheng, Ballston Lake, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 27/112 (2006.01); H01L 29/78 (2006.01); H01L 21/822 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7842 (2013.01); H01L 21/8221 (2013.01); H01L 27/1122 (2013.01); H01L 29/0843 (2013.01); H01L 29/66613 (2013.01);
Abstract

A semiconductor device is provided, which includes an array of active regions, gate stacks and substantially uniform epitaxial structures. The gate stacks of the array include a first gate stack and a second gate stack over an active region. An active pillar between the first gate stack and the second gate stack, and the active pillar separating two substantially uniform epitaxial structures. A contact structure over the active pillar, positioned equidistant from the first gate stack and the second gate stack.


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