The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2021

Filed:

Mar. 08, 2019
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Yi Hua Liu, Wuhan, CN;

Jun Liu, Wuhan, CN;

Lu Ming Fan, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/11582 (2017.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 21/02 (2006.01); H01L 29/40 (2006.01); H01L 27/11556 (2017.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 27/11556 (2013.01); H01L 29/1037 (2013.01); H01L 29/401 (2013.01); H01L 29/41741 (2013.01); H01L 29/456 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02178 (2013.01); H01L 21/02271 (2013.01); H01L 21/31116 (2013.01);
Abstract

Embodiments of three-dimensional (3D) memory devices having source contact structure in a memory stack are disclosed. The 3D memory device has a memory stack that includes a plurality of interleaved conductor layers and insulating layers extending over a substrate, a plurality of channel structures each extending vertically through the memory stack into the substrate, and a source contact structure extending vertically through the memory stack and extending laterally to separate the memory stack into a first portion and a second portion. The source contact structure may include a plurality of source contacts each electrically coupled to a common source of the plurality of channel structures.


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