The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Jun. 17, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chung-Liang Cheng, Changhua County, TW;
I-Ming Chang, ShinChu, TW;
Hsiang-Pi Chang, New Taipei, TW;
Yu-Wei Lu, Taipei, TW;
Ziwei Fang, Hsinchu, TW;
Huang-Lin Chao, Hillsboro, OR (US);
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes providing a channel region and growing an oxide layer on the channel region. Growing the oxide layer includes introducing a first source gas providing oxygen and introducing a second source gas providing hydrogen. The second source gas being different than the first source gas. The growing the oxide layer is grown by bonding the oxygen to a semiconductor element of the channel region to form the oxide layer and bonding the hydrogen to the semiconductor element of the channel region to form a semiconductor hydride byproduct. A gate dielectric layer and electrode can be formed over the oxide layer.