The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
May. 07, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Cheng-Hsien Chou, Tainan, TW;
Shih Pei Chou, Tainan, TW;
Chih-Yu Lai, Tainan, TW;
Sheng-Chau Chen, Tainan, TW;
Chih-Ta Chen, Tainan, TW;
Yeur-Luen Tu, Taichung, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Some embodiments of the present disclosure relate to a method in which a functional layer is formed over an upper semiconductor surface of a semiconductor substrate, and a capping layer is formed over the functional layer. A first etchant is used to form a recess through the capping layer and through the functional layer. The recess has a first depth and exposes a portion of the semiconductor substrate there through. A protective layer is formed along a lower surface and inner sidewalls of the recess. A second etchant is used to remove the protective layer from the lower surface of the recess and to extend the recess below the upper semiconductor surface to a second depth to form a deep trench. To prevent etching of the functional layer, the protective layer remains in place along the inner sidewalls of the recess while the second etchant is used.