The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Aug. 13, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chih-Ming Lee, Tainan, TW;
Hung-Che Liao, Tainan, TW;
Kun-Tsang Chuang, Miaoli County, TW;
Wei-Chung Lu, Tainan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76837 (2013.01); H01L 21/76819 (2013.01); H01L 21/76843 (2013.01); H01L 21/76879 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 21/02129 (2013.01); H01L 21/02164 (2013.01);
Abstract
A semiconductor structure includes a substrate, first and second conductors, a passivation material, and a passivation sidewall block. The first and second conductors are on the substrate. The passivation material is between the first and second conductors. The passivation sidewall block is on sidewalls of the first and second conductors and the passivation material.