The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

Oct. 29, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kyungseok Ko, Hwaseong-si, KR;

Hiromi Shima, Nirasaki, JP;

Eiji Kikama, Nirasaki, JP;

Keisuke Suzuki, Nirasaki, JP;

Shingo Hishiya, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C23C 16/34 (2006.01); H01L 21/02 (2006.01); H01L 23/532 (2006.01); H01L 21/67 (2006.01); H01L 21/321 (2006.01); H01L 27/11582 (2017.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/02211 (2013.01); H01L 21/32105 (2013.01); H01L 21/67011 (2013.01); H01L 23/53295 (2013.01); H01L 21/67017 (2013.01); H01L 21/67109 (2013.01); H01L 27/11582 (2013.01); H01L 29/40117 (2019.08);
Abstract

A method of forming a blocking silicon oxide film on a target surface on which a silicon oxide film and a silicon nitride film are exposed, includes: placing a workpiece having the target surface on which the silicon oxide film and the silicon nitride film are exposed in a processing container under a depressurized atmosphere; forming a spacer polysilicon film to be a sacrificial film on the target surface on which the silicon oxide film and the silicon nitride film are exposed; and substituting the spacer polysilicon film with a substitution silicon oxide film by supplying thermal energy, oxygen radicals and hydrogen radicals onto the workpiece.


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