The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Sep. 26, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yi-Chia Lee, Yilan County, TW;
Chin-Min Lin, Hsinchu, TW;
Cheng San Chou, Hsin Chu, TW;
Hsiang-Fu Chen, Zhubei, TW;
Wen-Chuan Tai, Hsinchu, TW;
Ching-Kai Shen, Zhubei, TW;
Hua-Shu Ivan Wu, Hsinchu County, TW;
Fan Hu, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. In some embodiments, a ventilation trench and an isolation trench are concurrently within a capping substrate. The isolation trench isolates a silicon region and has a height substantially equal to a height of the ventilation trench. A sealing structure is formed within the ventilation trench and the isolation trench, the sealing structure filing the isolation trench and defining a vent within the ventilation trench. A device substrate is provided and bonded to the capping substrate at a first gas pressure and hermetically sealing a first cavity associated with a first MEMS device and a second cavity associated with a second MEMS device. The capping substrate is thinned to open the vent to adjust a gas pressure of the second cavity.