The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2021

Filed:

Mar. 12, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Chang Cheng, Hsinchu, TW;

Fu-Yu Chu, Hsinchu, TW;

Ruey-Hsin Liu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/94 (2006.01); H01L 27/092 (2006.01); H01L 27/06 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42368 (2013.01); H01L 29/6659 (2013.01); H01L 29/66659 (2013.01); H01L 29/7833 (2013.01); H01L 29/7835 (2013.01); H01L 29/94 (2013.01); H01L 21/823857 (2013.01); H01L 27/06 (2013.01); H01L 27/0617 (2013.01); H01L 27/092 (2013.01); H01L 27/0928 (2013.01); H01L 29/66492 (2013.01);
Abstract

A semiconductor device includes a substrate and a gate structure over a top surface of the substrate. The semiconductor device further includes a source in the substrate on a first side of the gate structure. The semiconductor device further includes a drain in the substrate on a second side of the gate structure. The semiconductor device further includes a first well having a first dopant type, wherein the first well surrounds the source. The semiconductor device further includes a second well having a second dopant type opposite the first dopant type, wherein the second well surrounds the drain, an entirety of an upper most surface of the second well between the drain and the first well is coplanar with the top surface of the substrate, and the second well is spaced from the first well.


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