The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Jun. 05, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chin-Han Meng, Hsinchu, TW;
Jr-Sheng Chen, Hsinchu, TW;
Yin-Tun Chou, Hsinchu, TW;
Chih-Hua Chan, Hsinchu, TW;
Lin-Ching Huang, Hsinchu, TW;
Yu-Pei Chiang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.