The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Dec. 18, 2019
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Jianquan Jia, Wuhan, CN;
Kaikai You, Wuhan, CN;
Ying Cui, Wuhan, CN;
Kaiwei Li, Wuhan, CN;
Yali Song, Wuhan, CN;
Shan Li, Wuhan, CN;
An Zhang, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
A non-volatile memory device is disclosed. The non-volatile memory device includes a memory array, a plurality of word lines, a plurality of dummy word lines, a first control circuit and a second control circuit. The plurality of word lines are connected to a plurality of top memory cells and bottom memory cells of a memory string of the memory array. The plurality of dummy word lines are connected to a plurality of dummy memory cells connected between the plurality of top memory cells and bottom memory cells. The first control circuit is configured to apply a bit line pre-pulse signal to the bit line during a pre-charge period. The second control circuit is configured to apply a selected word line signal to a selected word line, apply an unselected word line signal to unselected word lines and apply a negative pre-pulse signal to the plurality of dummy word lines.