The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Jun. 07, 2018
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Takehito Koshizawa, San Jose, CA (US);
Eswaranand Venkatasubramanian, Santa Clara, CA (US);
Pramit Manna, Sunnyvale, CA (US);
Chi Lu, Sunnyvale, CA (US);
Chi-I Lang, Cupertino, CA (US);
Nancy Fung, Livermore, CA (US);
Abhijit Basu Mallick, Palo Alto, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C01B 32/28 (2017.01); H01L 21/308 (2006.01); C01B 32/26 (2017.01); H01L 21/311 (2006.01); C01B 32/25 (2017.01); H01L 21/033 (2006.01); C23C 16/26 (2006.01); C23C 16/505 (2006.01);
U.S. Cl.
CPC ...
C01B 32/28 (2017.08); C01B 32/25 (2017.08); C01B 32/26 (2017.08); C23C 16/26 (2013.01); C23C 16/505 (2013.01); H01L 21/02115 (2013.01); H01L 21/02205 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/0332 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01);
Abstract
A method of fabricating a semiconductor structure is described. The method comprises forming at least one mandrel on a substrate, the at least one mandrel comprising a diamond-like carbon and having a top and two opposing sidewalls, the diamond-like carbon comprising at least 40% sphybridized carbon atoms. The mandrel may be used in Self-Aligned Multiple Patterning (SAMP) processes.