The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Apr. 27, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chung-Huai Chang, Taichung, TW;
Chao-Hsun Wang, Taoyuan, TW;
Kuo-Yi Chao, Hsinchu, TW;
Mei-Yun Wang, Chupei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A FinFET device structure is provided. The FinFET device structure includes a gate structure formed over a fin structure and an S/D contact structure formed over the fin structure. The FinFET device structure also includes an S/D conductive plug formed over the S/D contact structure, and the S/D conductive plug includes a first barrier layer and a first conductive layer. The FinFET device structure includes a gate contact structure formed over the gate structure, and the gate contact structure includes a second barrier layer and a second conductive layer. The FinFET device structure includes a first isolation layer surrounding the S/D conductive plug, and the first barrier layer is between the first isolation layer and the first conductive layer. A second isolation layer surrounding the gate contact structure, and the second barrier layer is between the second isolation layer and the second conductive layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile