The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Jan. 03, 2019
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01J 37/3255 (2013.01); H01J 37/32541 (2013.01); H01J 37/32568 (2013.01); H01J 37/32642 (2013.01); H01J 37/32715 (2013.01); H01L 21/31116 (2013.01); H01L 21/67069 (2013.01); H01L 21/76804 (2013.01); H01L 21/76829 (2013.01); H01J 2237/002 (2013.01); H01J 2237/3343 (2013.01);
Abstract
An etching method is provided. The etching method is performed on a substrate having a first film to a third film. The third film is provided on an underlying region, the second film is provided on the third film, the first film is provided on the second film. The second film contains silicon and nitrogen. The first film to the third film are etched in sequence. Plasma of a processing gas containing fluorine and hydrogen is used in the etching of the first film to the third film. A temperature of the substrate is set to be equal to or less than 20° C. at least in the etching of the second film.