The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Aug. 14, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yi-Chen Ho, Taichung, TW;
You-Hua Chou, Hsinchu, TW;
Yen-Hao Liao, New Taipei, TW;
Che-Lun Chang, Kaohsiung, TW;
Zhen-Cheng Wu, Taichung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02203 (2013.01); H01L 21/0228 (2013.01); H01L 21/31138 (2013.01); H01L 21/7682 (2013.01); H01L 21/02118 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/02299 (2013.01); H01L 21/76807 (2013.01); H01L 21/76835 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01);
Abstract
A method for manufacturing a dielectric layer includes forming a first dielectric film over a substrate. A first porogen is deposited over the first dielectric film. A second dielectric film is formed on and in contact with the first dielectric film and the first porogen. The first porogen is removed.