The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2021

Filed:

May. 18, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sang Ki Nam, Seongnam-si, KR;

Akira Koshiishi, Hwaseong-si, KR;

Kwangyoub Heo, Yongin-si, KR;

Sunggil Kang, Hwaseong-si, KR;

Beomjin Yoo, Hwaseong-si, KR;

Sungyong Lim, Seoul, KR;

Vasily Pashkovskiy, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C23C 16/00 (2006.01); H01J 37/32 (2006.01); H01L 21/66 (2006.01); H01L 21/3065 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32422 (2013.01); H01J 37/32568 (2013.01); H01J 37/32596 (2013.01); H01J 37/32623 (2013.01); H01J 37/32715 (2013.01); H01L 21/3065 (2013.01); H01L 21/6831 (2013.01); H01L 22/26 (2013.01); H01J 2237/334 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01);
Abstract

Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.


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