The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2021

Filed:

Feb. 20, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chen-Hung Tsai, Hsinchu, TW;

Chen-Ming Lee, Taoyuan County, TW;

Fu-Kai Yang, Hsinchu, TW;

Mei-Yun Wang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 29/40 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41766 (2013.01); H01L 21/31053 (2013.01); H01L 21/32051 (2013.01); H01L 21/76831 (2013.01); H01L 29/401 (2013.01);
Abstract

Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes an inter-level dielectric layer. A first contact that includes a fill material is formed that extends through the inter-level dielectric layer. The inter-level dielectric layer is recessed such that the fill material extends above a top surface of the inter-level dielectric layer. An etch-stop layer is formed on the inter-level dielectric layer such that the fill material of the first contact extends into the etch-stop layer. A second contact is formed extending through the etch-stop layer to couple to the first contact. In some such examples, the second contact physically contacts a top surface and a side surface of the first contact.


Find Patent Forward Citations

Tsai, Chen-Hung. (2021). Integrated circuits having protruding interconnect conductors (U.S. Patent No. 10943983). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10943983

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…