The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
Mar. 27, 2019
Intel Corporation, Santa Clara, CA (US);
Daniel Ouellette, Portland, OR (US);
Christopher Wiegand, Portland, OR (US);
Justin Brockman, Portland, OR (US);
Tofizur Rahman, Portland, OR (US);
Oleg Golonzka, Beaverton, OR (US);
Angeline Smith, Hillsboro, OR (US);
Andrew Smith, Hillsboro, OR (US);
James Pellegren, Portland, OR (US);
Aaron Littlejohn, Portland, OR (US);
Michael Robinson, Beaverton, OR (US);
Huiying Liu, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A memory device includes a first electrode, a conductive layer including iridium above the first electrode, a magnetic junction on the conductive layer and a second electrode above the magnetic junction. The magnetic junction includes a magnetic structure including a first magnetic layer including cobalt, a non-magnetic layer including platinum or tungsten on the first magnetic layer and a second magnetic layer including cobalt on the non-magnetic layer. The magnetic junction further includes an anti-ferromagnetic layer on the magnet structure, a fixed magnet above the anti-ferromagnetic layer, a free magnet above the fixed magnet and a tunnel barrier between the fixed magnet and the free magnet.