The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Oct. 24, 2019
Applicant:
Elpis Technologies Inc., Ottawa, CA;
Inventors:
Choonghyun Lee, Rensselaer, NY (US);
Takashi Ando, Eastchester, NY (US);
Jingyun Zhang, Albany, NY (US);
Pouya Hashemi, Purchase, NY (US);
Alexander Reznicek, Troy, NY (US);
Assignee:
ELPIS TECHNOLOGIES INC., Ottawa, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 21/28 (2006.01); H01L 21/3215 (2006.01); H01L 23/535 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 27/088 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4983 (2013.01); H01L 21/28088 (2013.01); H01L 21/3215 (2013.01); H01L 21/823431 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 21/823871 (2013.01); H01L 21/823885 (2013.01); H01L 21/845 (2013.01); H01L 23/535 (2013.01); H01L 27/0886 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/4966 (2013.01); H01L 29/66666 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7827 (2013.01);
Abstract
Vertical transport field effect transistors (FETs) having improved device performance are provided. Notably, vertical transport FETs having a gradient threshold voltage are provided. The gradient threshold voltage is provided by introducing a threshold voltage modifying dopant into a physically exposed portion of a metal gate layer composed of an n-type workfunction TiN. The threshold voltage modifying dopant changes the threshold voltage of the original metal gate layer.