The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Mar. 04, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Yi-Sheng Chen, Hsinchu, TW;
Kong-Beng Thei, Hsinchu Country, TW;
Fu-Jier Fan, Hsinchu, TW;
Jung-Hui Kao, Hsinchu, TW;
Yi-Huan Chen, Hsinchu, TW;
Kau-Chu Lin, Taichung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/823475 (2013.01); H01L 23/528 (2013.01);
Abstract
A semiconductor device includes a transistor. The transistor includes an active region in a substrate, a patterned conductive layer being a portion of an interconnection layer for routing, and an insulating layer extending over the substrate and configured to insulate the active region from the patterned conductive layer. The patterned conductive layer and the insulating layer serve as a gate of the transistor.