The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2021

Filed:

Sep. 03, 2019
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Cedric Thomas, Taiwa-cho, JP;

Andrew Nolan, Taiwa-cho, JP;

Alok Ranjan, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 29/40 (2006.01); H01L 21/033 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 21/02274 (2013.01); H01L 21/0337 (2013.01); H01L 29/401 (2013.01); H01L 29/66795 (2013.01); H01L 29/66818 (2013.01);
Abstract

Methods and systems for surface modification are described. In an embodiment, a method of etching includes providing a substrate having a device structure, portions of which are identified for modification. Such a method may also include passivating target surfaces of the device structure by exposing the device structure to a gas-phase composition at a processing pressure equal to or greater than 100 mTorr to form a protection layer on the target surfaces. Other embodiments of a method may include providing a substrate having a device structure, portions of which identified for removal. Such methods may further include passivating target surfaces of the device structure by exposing the device structure to a gas-phase composition, wherein the ratio of the radical content to the ion content exceeds 10-to-1.


Find Patent Forward Citations

Loading…