The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Feb. 25, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jin-Kuk Bae, Hwaseong-si, KR;

Hyun-Soo Chung, Hwaseong-si, KR;

Han-Sung Ryu, Seoul, KR;

In-Young Lee, Yongin-si, KR;

Chan-Ho Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 24/08 (2013.01); H01L 2924/1434 (2013.01);
Abstract

A semiconductor chip includes a substrate having a low-k material layer. An electrode pad is disposed the substrate. A first protection layer at least partially surrounds the electrode pad. The first protection layer includes a first opening at an upper portion thereof. A buffer pad is electrically connected to the electrode pad. A second protection layer at least partially surrounds the buffer pad. The second protection layer includes a second opening at an upper portion thereof. A pillar layer and a solder layer are sequentially stacked on the buffer pad. A thickness of the buffer pad is greater than a thickness of the electrode pad. A width of the first opening in a first direction parallel to an upper surface of the semiconductor substrate is equal to or greater than a width of the second opening in the first direction.


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