The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Sep. 16, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chao-Hsun Wang, Taoyuan County, TW;
Yu-Feng Yin, Hsinchu County, TW;
Kuo-Yi Chao, Hsinchu, TW;
Mei-Yun Wang, Hsin-Chu, TW;
Feng-Yu Chang, Kaohsiung, TW;
Chen-Yuan Kao, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A conductive layer is formed between a metal gate structure, which includes a high-k gate dielectric layer and a gate electrode, and a contact feature. The conductive layer can be selectively deposited on a top surface of the gate electrode or, alternatively, non-selectively formed on the top surface of the gate electrode and the gate dielectric layer by controlling, for example, time of deposition. The conductive layer can have a bottom portion embedded into the gate electrode. The conductive layer and the contact feature can include the same composition, though they may be formed using different deposition techniques.