The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Feb. 15, 2017
Lam Research Corporation, Fremont, CA (US);
Chin-Yi Liu, San Jose, CA (US);
Daniel Lai, San Jose, CA (US);
Rajitha Vemuri, Tempe, AZ (US);
Padma Gopalakrishnan, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
An insulator-type substrate is positioned on a support surface of a substrate support structure in exposure to a plasma. An initial clamping voltage is applied to an electrode within the substrate support structure to rapidly accumulate electrical charge on the support surface to hold the substrate. A backside cooling gas is flowed to a region between the substrate and the support surface, and a leak rate of the backside cooling gas is monitored. A steady clamping voltage is applied to the electrode, and the steady clamping voltage is adjusted in a step-wise manner to maintain the monitored leak rate of the backside cooling gas at just less than a maximum allowable leak rate. Or, a pulsed clamping voltage is applied to the electrode, and the pulsed clamping voltage is adjusted to maintain the monitored leak rate of the backside cooling gas at just less than the maximum allowable leak rate.