The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
May. 03, 2019
Applied Materials, Inc., Santa Clara, CA (US);
Satya Thokachichu, San Jose, CA (US);
Edward P. Hammond, IV, Hillsborough, CA (US);
Viren Kalsekar, Sunnyvale, CA (US);
Zheng John Ye, Santa Clara, CA (US);
Sarah Michelle Bobek, Santa Clara, CA (US);
Abdul Aziz Khaja, San Jose, CA (US);
Vinay K. Prabhakar, Cupertino, CA (US);
Venkata Sharat Chandra Parimi, Sunnyvale, CA (US);
Prashant Kumar Kulshreshtha, San Jose, CA (US);
Kwangduk Douglas Lee, Redwood City, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.