The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Mar. 01, 2019
Globalfoundries Inc., Grand Cayman, KY;
Vimal K. Kamineni, Mechanicville, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Adra V. Carr, Albany, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Structures that include a field effect-transistor and methods of forming a structure that includes a field-effect transistor. A first field-effect transistor includes a first source/drain region, and a second field-effect transistor includes a second source/drain region. A first contact is arranged over the first source/drain region, and a second contact is arranged over the second source/drain region. A portion of a dielectric layer, which is composed of a low-k dielectric material, is laterally arranged between the first contact and the second contact.