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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10916420 B1

PDFFull Text
Date of Patent:
Feb. 09, 2021

Filed:

Aug. 29, 2019

Processing method and plasma processing apparatus

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Masahiro Tabata, Miyagi, JP;

Toru Hisamatsu, Miyagi, JP;

Maju Tomura, Miyagi, JP;

Sho Kumakura, Miyagi, JP;

Hironari Sasagawa, Miyagi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

Rothwell, Figg, Ernst & Manbeck, P.C.

Primary Examiner:

Lan Vinh

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01J 37/32 (2006.01); H01L 21/683 (2006.01); H01L 21/67 (2006.01); H01L 21/311 (2006.01); C23C 16/50 (2006.01); C23C 16/455 (2006.01); C23C 16/02 (2006.01); C23C 16/56 (2006.01); C23C 16/46 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/0227 (2013.01); C23C 16/45553 (2013.01); C23C 16/46 (2013.01); C23C 16/50 (2013.01); C23C 16/56 (2013.01); H01J 37/32724 (2013.01); H01L 21/0206 (2013.01); H01L 21/0212 (2013.01); H01L 21/0228 (2013.01); H01L 21/02205 (2013.01); H01L 21/02211 (2013.01); H01L 21/31138 (2013.01); H01L 21/67069 (2013.01); H01L 21/67103 (2013.01); H01L 21/6833 (2013.01); H01J 2237/002 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3327 (2013.01); H01J 2237/3341 (2013.01);
Abstract

A substrate processing method includes: providing a substrate in a processing container; selectively forming a first film on a surface of a substrate by plasma enhanced vapor deposition (PECVD); and forming a second film by atomic layer deposition (ALD) in a region of the substrate where the first film does not exist. The second film is formed by repeatedly performing a sequence including: forming a precursor layer on the surface of the substrate; purging an interior of the processing container after forming of the precursor; converting the precursor layer into the second film; and purging a space in the processing container after the converting. A plasma processing apparatus performing the method is also provided.

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