The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Apr. 22, 2019
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 51/00 (2006.01); H01L 21/67 (2006.01); C23C 16/00 (2006.01); H01L 21/683 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31138 (2013.01); C23C 16/00 (2013.01); H01J 37/32449 (2013.01); H01J 37/32853 (2013.01); H01J 37/32862 (2013.01); H01J 37/32981 (2013.01); H01L 21/02118 (2013.01); H01L 21/3065 (2013.01); H01L 21/6719 (2013.01); H01L 21/67103 (2013.01); H01L 21/67109 (2013.01); H01L 21/6831 (2013.01); H01L 51/0017 (2013.01);
Abstract
There is provided a method for etching an organic region of a substrate. In the method, an organic film is formed on a surface in a chamber of a plasma processing apparatus. The surface extends out around a region where the substrate is to be disposed in the chamber of the plasma processing apparatus, and the organic region is etched by chemical species from plasma in the chamber.