The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

Sep. 28, 2018
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Chanyuan Liu, Portland, OR (US);

Fayaz A. Shaikh, Lake Oswego, OR (US);

Niraj Rana, West Linn, OR (US);

Nick Ray Linebarger, Jr., Beaverton, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 23/00 (2006.01); H01L 21/67 (2006.01); H01L 21/68 (2006.01); H01J 37/32 (2006.01); C23C 16/455 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); C23C 16/45565 (2013.01); C23C 16/52 (2013.01); H01J 37/32183 (2013.01); H01J 37/32449 (2013.01); H01J 37/32458 (2013.01); H01J 37/32651 (2013.01); H01L 21/67288 (2013.01); H01L 21/68 (2013.01); H01L 23/562 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3341 (2013.01);
Abstract

Methods for reducing warpage of bowed semiconductor substrates, particularly saddle-shaped bowed semiconductor substrates, are provided herein. Methods involve depositing a bow compensation layer by plasma enhanced chemical vapor deposition on the backside of the bowed semiconductor substrate by region, such as by quadrants, to form a compressive film on a tensile substrate and a tensile film on a compressive substrate. Methods involve flowing different gases from different nozzles on a surface of a showerhead to deliver various gases by region in a one-step operation or flowing gases in a multi-step process by shielding regions of the showerhead during delivery of gases to deliver specific gases from non-shielded regions onto regions of the bowed semiconductor substrate by alternating between rotating the semiconductor substrate and flowing gases to the backside of the bowed semiconductor substrate.


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