The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Nov. 17, 2017
Tokyo Electron Limited, Tokyo, JP;
Noriaki Fukiage, Nirasaki, JP;
Kentaro Oshimo, Nirasaki, JP;
Shimon Otsuki, Nirasaki, JP;
Hideomi Hane, Nirasaki, JP;
Jun Ogawa, Nirasaki, JP;
Hiroaki Ikegawa, Nirasaki, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
There is provided a film formation processing method for forming, in a vacuum atmosphere, a silicon nitride film along an inner wall surface of a recess constituting a pattern formed on a surface of a substrate, which includes: forming the silicon nitride film on the substrate by repeating, plural times, a process of supplying a raw material gas containing silicon to the substrate and subsequently, supplying an ammonia gas to the substrate to generate a silicon nitride on the substrate; and subsequently, modifying the silicon nitride film by activating a hydrogen gas and an ammonia gas and supplying the activated hydrogen gas and the activated ammonia gas to the substrate.