The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2021

Filed:

Jun. 19, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sejin Oh, Hwaseong-si, KR;

Kyohyeok Kim, Seoul, KR;

Jongwoo Sun, Hwaseong-si, KR;

Dougyong Sung, Seoul, KR;

Sung-Ki Lee, Hwaseong-si, KR;

Jaehyun Lee, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01L 21/027 (2006.01); H01J 37/32 (2006.01); H01J 37/22 (2006.01); G01N 21/94 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32963 (2013.01); G01N 21/94 (2013.01); H01J 37/226 (2013.01); H01J 37/32082 (2013.01); H01L 21/0274 (2013.01); H01L 21/306 (2013.01); H01L 21/3065 (2013.01); H01L 22/12 (2013.01); H01L 22/26 (2013.01); G01N 2201/06106 (2013.01); H01J 2237/2445 (2013.01); H01J 2237/334 (2013.01);
Abstract

A substrate processing method includes providing a substrate into a process chamber; introducing a reference light into the process chamber; generating a plasma light in the process chamber while performing an etching process on the substrate; receiving the reference light and the plasma light; and detecting an etching end point by analyzing the plasma light and the reference light. Detecting the etching end point includes a compensation adjustment based on a change rate of an absorption signal of the reference light with respect to a change rate of an emission signal of the plasma light.


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