The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Dec. 26, 2019
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Xinlei Jia, Wuhan, CN;
Shan Li, Wuhan, CN;
Kaiwei Li, Wuhan, CN;
Jianquan Jia, Wuhan, CN;
Lei Jin, Wuhan, CN;
Kaikai You, Wuhan, CN;
Ying Cui, Wuhan, CN;
Yali Song, Wuhan, CN;
Wei Hou, Wuhan, CN;
Zhiyu Wang, Wuhan, CN;
Hongtao Liu, Wuhan, CN;
Assignee:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 16/28 (2006.01); G11C 16/24 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3427 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/24 (2013.01); G11C 16/28 (2013.01);
Abstract
A method of performing a programming operation to a three dimensional (3D) NAND memory device is disclosed. The method makes residual electrons trapped in storage regions of middle dummy memory cells of the unselected string of the 3D NAND memory device to be removed during the pre-charging phase, so as to reduce program disturb to the selected string which neighbors the unselected string.