The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Oct. 05, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsin-Che Chiang, Taipei, TW;
Wei-Chih Kao, Taipei, TW;
Chun-Sheng Liang, Puyan Township, TW;
Jeng-Ya Yeh, New Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method of fabricating a semiconductor device includes forming a dummy gate structure on a substrate, forming gate spacers on sidewalls of the dummy gate structure, and depositing an interlayer dielectric layer around the gate spacers. The method also includes removing the dummy gate structure to form a space between the gate spacers, and forming a gate structure in the space, wherein the gate structure includes a gate dielectric layer and a gate electrode layer over the gate dielectric layer. The method further includes removing a portion of the gate electrode layer to form a recess that is surrounded by the gate dielectric layer. In addition, the method includes implanting on the interlayer dielectric layer to form a strained layer for bending the gate dielectric layer and the gate spacers towards the recess.