The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Oct. 24, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Karthick Murukesan, Hsinchu, TW;
Wen-Chih Chiang, Hsinchu, TW;
Chiu-Hua Chung, Hsinchu, TW;
Chun Lin Tsai, Hsin-Chu, TW;
Kuo-Ming Wu, Hsinchu, TW;
Shiuan-Jeng Lin, Hsinchu, TW;
Tien Sheng Lin, Yangmei Township, TW;
Yi-Min Chen, Hsinchu, TW;
Hung-Chou Lin, Douliu, TW;
Yi-Cheng Chiu, New Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present application are directed towards an integrated circuit (IC) in which a bootstrap metal-oxide-semiconductor (MOS) device is integrated with a high voltage metal-oxide-semiconductor (HVMOS) device and a high voltage junction termination (HVJT) device. In some embodiments, a drift well is in the semiconductor substrate. The drift well has a first doping type and has a ring-shaped top layout. A first switching device is on the drift well. A second switching device is on the semiconductor substrate, at an indent in a sidewall the drift well. A peripheral well is in the semiconductor substrate and has a second doping type opposite the first doping type. The peripheral well surrounds the drift well, the first switching device, and the second switching device, and further separates the second switching device from the drift well and the first switching device.