The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

May. 16, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chun-Ti Lu, Hsinchu, TW;

Chih-Hua Chen, Hsinchu County, TW;

Hao-Yi Tsai, Hsinchu, TW;

Ming-Hung Tseng, Miaoli County, TW;

Yen-Liang Lin, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 25/10 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 21/56 (2006.01); H01L 21/48 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/105 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/568 (2013.01); H01L 23/3121 (2013.01); H01L 23/5383 (2013.01); H01L 23/5389 (2013.01); H01L 25/50 (2013.01); H01L 2225/1058 (2013.01);
Abstract

A package-on-package structure includes a first package, a second package and first intermetallic features. The first package includes at least one semiconductor die, an insulating encapsulant, a redistribution layer and conductive pads. The insulating encapsulant is encapsulating the semiconductor die. The redistribution layer is disposed on the insulating encapsulant. The conductive pads are located at a surface of the insulating encapsulant. The second package is stacked on the first package and electrically connected to the conductive pads through connectors. The first intermetallic features are sandwiched in between the conductive pads and the connectors and have a control region and a growth region. The connectors are connected to the control region, and the growth region spreads out from a periphery of the control region such that the spreading of the growth region extends away from the conductive pads in a direction towards the semiconductor die.


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