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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10879214 B1

PDFFull Text
Date of Patent:
Dec. 29, 2020

Filed:

Jan. 19, 2018

Die stack structure and method of fabricating the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yi-Hsiu Chen, Hsinchu, TW;

Wen-Chih Chiou, Miaoli County, TW;

Yung-Lung Chen, Miaoli County, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

JCIPRNET

Primary Examiner:

Thanh Y Tran

Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 23/544 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/481 (2013.01); H01L 23/544 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68309 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68381 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/0225 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/05006 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/0601 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/13101 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/80203 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06596 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/1304 (2013.01); H01L 2924/141 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/1436 (2013.01);
Abstract

Provided is a die stack structure including a first die, a second die, a first bonding structure, and a second bonding structure. The first bonding structure is disposed on a back side of the first die. The second bonding structure is disposed on a front side of the second die. The first die and the second die are bonded together via the first bonding structure and the second bonding structure and a bondable topography variation of a surface of the first bonding structure bonding with the second bonding structure is less than less than 1 μm per 1 mm range. A method of manufacturing the die stack structure is also provided.

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