The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Sep. 02, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chi-Cherng Jeng, Tainan, TW;
Shyh-Wei Cheng, Zhudong Township, Hsinchu County, TW;
Yun Chang, Hsinchu, TW;
Chen-Chieh Chiang, Kaohsiung, TW;
Jung-Chi Jeng, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first mask layer over a dielectric layer. The first mask layer has a first trench, and the first trench has a first inner wall and a bottom surface. The method includes forming an anti-bombardment layer over a first top surface of the first mask layer. The method includes forming a second mask layer over the first inner wall of the first trench. The method includes removing the first portion, the first mask layer, the anti-bombardment layer, and the second mask layer to form a third trench in the dielectric layer. The method includes forming a conductive structure in the third trench.