The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Sep. 10, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Wen-Che Tsai, Hsinchu, TW;

Min-Yann Hsieh, Kaohsiung, TW;

Hua Feng Chen, Hsinchu, TW;

Kuo-Hua Pan, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/82 (2006.01); H01L 23/485 (2006.01); H01L 29/41 (2006.01); H01L 21/8234 (2006.01); H01L 23/532 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 23/528 (2006.01); H01L 21/764 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/28568 (2013.01); H01L 21/31116 (2013.01); H01L 21/764 (2013.01); H01L 21/76843 (2013.01); H01L 21/76882 (2013.01); H01L 21/76883 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 23/485 (2013.01); H01L 23/528 (2013.01); H01L 23/53209 (2013.01); H01L 23/53295 (2013.01); H01L 29/41791 (2013.01);
Abstract

The present disclosure provides an integrated circuit (IC) structure. The IC structure includes first and second fins formed on a semiconductor substrate and laterally separated from each other by an isolation feature, the isolation feature formed of a dielectric material that physically contacts the semiconductor substrate; and a contact feature between the first and second fins and extending into the isolation feature thereby defining an air gap vertically between the isolation feature and the contact feature, the dielectric material of the isolation feature extending from the semiconductor substrate to the contact feature.


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