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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10879078 B1

PDFFull Text
Date of Patent:
Dec. 29, 2020

Filed:

Feb. 19, 2019

Method of patterning resist layer and method of forming semiconductor structure using patterned resist layer

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chien-Wei Wang, Zhubei, TW;

Li-Po Yang, HsinChu, TW;

Ching-Yu Chang, Yuansun Village, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

McClure, Qualey & Rodack, LLP

Primary Examiner:

Shouxiang Hu

Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/308 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/38 (2006.01); G03F 7/30 (2006.01); G03F 7/039 (2006.01); G03F 7/038 (2006.01); H01L 21/3105 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3088 (2013.01); G03F 7/038 (2013.01); G03F 7/039 (2013.01); G03F 7/16 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/2006 (2013.01); G03F 7/30 (2013.01); G03F 7/38 (2013.01); H01L 21/0273 (2013.01); H01L 21/0274 (2013.01); H01L 21/0275 (2013.01); H01L 21/0276 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/3086 (2013.01); H01L 21/31058 (2013.01); H01L 21/31144 (2013.01); H01L 21/823431 (2013.01);
Abstract

A method of patterning a resist layer is provided. The method includes forming the resist layer over the top surface of a silicon-containing layer that has a first contact angle. The method also includes exposing and developing the resist layer to form a patterned resist layer and expose a portion of the top surface of the silicon-containing layer. The method also includes applying a treating compound to the exposed portion of the top surface of the silicon-containing layer, so that the exposed portion of the top surface has a second contact angle that is greater than the first contact angle. The method also includes reflowing the patterned resist layer over the top surface of the silicon-containing layer having the second contact angle.

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