The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Jan. 03, 2019
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Risako Miyoshi, Miyagi, JP;

Norihiko Amikura, Miyagi, JP;

Kazuyuki Miura, Miyagi, JP;

Masaaki Nagase, Osaka, JP;

Satoru Yamashita, Osaka, JP;

Yohei Sawada, Osaka, JP;

Kouji Nishino, Osaka, JP;

Nobukazu Ikeda, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01F 1/50 (2006.01); G01F 25/00 (2006.01); G01F 3/36 (2006.01);
U.S. Cl.
CPC ...
G01F 1/50 (2013.01); G01F 3/36 (2013.01); G01F 25/0053 (2013.01);
Abstract

A substrate processing system includes a gas supply unit having a first gas flow channel. A second gas flow channel of a flow rate measurement system is connected to the first gas flow channel. The flow rate measurement system further includes a third gas flow channel connected to the second gas flow channel, and a pressure sensor and a temperature sensor that measure a pressure and a temperature, respectively, in the third gas flow channel. In a method, a flow rate of a gas output from a flow rate controller of the gas supply unit is calculated using a build-up method. The flow rate of a gas is calculated without using the total volume of the first gas flow channel and the second gas flow channel and temperatures in the first gas flow channel and the second gas flow channel.


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