The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Oct. 19, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Kai-Hsiang Chang, New Taipei, TW;

Keith Kuang-Kuo Koai, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/50 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45559 (2013.01); C23C 16/4583 (2013.01); C23C 16/45502 (2013.01); C23C 16/45565 (2013.01); C23C 16/50 (2013.01); H01J 37/3244 (2013.01); H01J 37/32449 (2013.01); H01L 21/0262 (2013.01); H01L 21/02271 (2013.01); H01L 21/28556 (2013.01);
Abstract

The present disclosure provides an apparatus for fabricating a semiconductor device, including a reaction chamber having a gas inlet for receiving a gas flow, a pedestal in the reaction chamber configured to support a substrate, and a first gas distribution plate (GDP) in the reaction chamber and between the gas inlet and the pedestal, wherein the first GDP is configured to include a plurality of concentric regions arranged along a radial direction, and a plurality of first holes arranged in the concentric regions of the first GDP, an open ratio of the first GDP in an outer concentric region is greater than that in an inner concentric region proximal to the outer concentric region to redistribute the gas flow.


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