The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Dec. 24, 2019
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Yu-Hung Cheng, Tainan, TW;
Po-Jung Chiang, Taoyuan County, TW;
Yen-Hsiu Chen, Tainan, TW;
Yeur-Luen Tu, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor device is provided. The method includes: providing a substrate including a first semiconductive region of a first conductive type and gate structures over the first semiconductive region, wherein a gap between the gate structures exposes a portion of the first semiconductive region; and forming a second semiconductive region of a second conductive type in the gap starting from the exposed portion of the first semiconductive region. The forming of the second semiconductive region includes: growing, in a chamber, an epitaxial silicon-rich layer having a first sidewall adjacent to the gate structures and a first central portion; and, in the chamber, shaping the epitaxial silicon-rich layer to form a second sidewall adjacent to the gate structures and a second central portion, wherein a first height difference between the first sidewall and the first central portion is greater than a second height difference between the second sidewall and the second central portion.