The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
May. 10, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Jia-Heng Wang, Kaohsiung, TW;
I-Wen Wu, Hsinchu, TW;
Chen-Ming Lee, Taoyuan County, TW;
Fu-Kai Yang, Hsinchu, TW;
Mei-Yun Wang, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming an epitaxial source/drain (S/D) feature over a semiconductor layer, where the epitaxial S/D feature includes silicon (Si) and germanium (Ge), forming a trench to expose a portion of the epitaxial S/D feature, annealing the exposed portion of the epitaxial S/D feature, where the annealing forms at a top surface of the epitaxial S/D feature a first region having a first Ge concentration and a second region disposed below the first region having a second Ge concentration that is less than the first Ge concentration, oxidizing the first region, removing the oxidized first region, and forming an S/D contact in the trench over the second region.