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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10867913 B1

PDFFull Text
Date of Patent:
Dec. 15, 2020

Filed:

Mar. 19, 2018

Method and apparatus for forming self-aligned via with selectively deposited etching stop layer

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yung-Hsu Wu, Taipei, TW;

Hai-Ching Chen, Hsinchu, TW;

Jung-Hsun Tsai, Taoyuan, TW;

Shau-Lin Shue, Hsinchu, TW;

Tien-I Bao, Dayuan Township, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Bac H Au

Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/0214 (2013.01); H01L 21/0228 (2013.01); H01L 21/02126 (2013.01); H01L 21/02282 (2013.01); H01L 21/02348 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76807 (2013.01); H01L 21/76877 (2013.01); H01L 21/76885 (2013.01); H01L 23/5226 (2013.01); H01L 23/532 (2013.01);
Abstract

A first layer is located over a substrate. The first layer includes a first dielectric component and a first conductive component. A first etching stop layer is located over the first dielectric component. A metal capping layer is located over the first conductive component. A second etching stop layer is located over the first etching stop layer and over the metal capping layer. A second layer is located over the second etching stop layer. The second layer includes a second dielectric component and a second conductive component. A third conductive component electrically interconnects the second conductive component to the first conductive component.

Find Patent Forward Citations

Wu, Yung-Hsu. (2020). Method and apparatus for forming self-aligned via with selectively deposited etching stop layer (U.S. Patent No. 10867913). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10867913

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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