The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 2020

Filed:

Aug. 22, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chih-Horng Chang, Taipei, TW;

Cheng-Yen Hsieh, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/10 (2006.01); H01L 23/34 (2006.01); H01L 23/48 (2006.01); H01L 23/373 (2006.01); H01L 27/16 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 23/3128 (2013.01); H01L 23/373 (2013.01); H01L 23/49827 (2013.01); H01L 24/16 (2013.01); H01L 25/0657 (2013.01); H01L 27/16 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/12105 (2013.01);
Abstract

A semiconductor structure includes a first die including a first surface and a second surface opposite to the first surface; a first molding surrounding the first die; and a first redistribution layer (RDL) disposed over the second surface of the first die and the first molding, and including a first dielectric layer, a first interconnect structure surrounded by the first dielectric layer, and a cooling mechanism disposed within the first dielectric layer, wherein the cooling mechanism includes a first conductive member, a second conductive member disposed opposite to the first conductive member, a first thermoelectric member and a second thermoelectric member adjacent to the first thermoelectric member; and wherein the first thermoelectric member and the second thermoelectric member extend substantially in parallel to the second surface of the first die and extend between the first conductive member and the second conductive member.


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