The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Apr. 23, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yu-Yang Shen, Kaohsiung, TW;
Chien-Hsien Tseng, Hsinchu, TW;
Dun-Nian Yaung, Taipei, TW;
Nai-Wen Cheng, Tainan, TW;
Pao-Tung Chen, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a first through substrate via (TSV) within a first semiconductor substrate. The first semiconductor substrate has a front-side surface and a back-side surface respectively on opposite sides of the first semiconductor substrate. The first semiconductor substrate includes a first doped channel region extending from the front-side surface to the back-side surface. The first through substrate via (TSV) is defined at least by the first doped channel region. A first interconnect structure on the front-side surface of the first semiconductor substrate. The first interconnect structure includes a plurality of first conductive wires and a plurality of first conductive vias, and the first conductive wires and the first conductive vias define a conductive path to the first TSV.