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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10867864 B1

PDFFull Text
Date of Patent:
Dec. 15, 2020

Filed:

Nov. 16, 2018

Semiconductor device and method of manufacture

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chung-Chiang Wu, Taichung, TW;

Hsin-Han Tsai, Hsinchu, TW;

Wei-Chin Lee, Taipei, TW;

Chia-Ching Lee, New Taipei, TW;

Hung-Chin Chung, Pingzhen, TW;

Cheng-Lung Hung, Hsinchu, TW;

Da-Yuan Lee, Jhubei, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Brian Turner

Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 27/088 (2006.01); H01L 29/51 (2006.01); H01L 21/8234 (2006.01); H01L 21/321 (2006.01); H01L 27/092 (2006.01); H01L 21/3213 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 21/027 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/82345 (2013.01); H01L 21/28079 (2013.01); H01L 21/28088 (2013.01); H01L 21/32133 (2013.01); H01L 21/823462 (2013.01); H01L 21/823468 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 21/823864 (2013.01); H01L 27/0886 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 29/401 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 21/0273 (2013.01); H01L 21/28556 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 29/42372 (2013.01);
Abstract

Semiconductor devices and methods of manufacturing semiconductor devices with differing threshold voltages are provided. In embodiments the threshold voltages of individual semiconductor devices are tuned through the removal and placement of differing materials within each of the individual gate stacks within a replacement gate process, whereby the removal and placement helps keep the overall process window for a fill material large enough to allow for a complete fill.

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