The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Feb. 18, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Po-Chun Liu, Hsinchu, TW;
Chi-Ming Chen, Zhubei, TW;
Min-Chang Ching, Zhubei, TW;
Chen-Hao Chiang, Jhongli, TW;
Chung-Yi Yu, Hsinchu, TW;
Chung-Chieh Hsu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/201 (2006.01); H01L 29/10 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 21/0251 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 29/454 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/1066 (2013.01); H01L 29/201 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01);
Abstract
A high electron mobility transistor (HEMT) includes a substrate, and a channel layer over the substrate, wherein and at least one of the channel layer or the active layer comprises indium. The HEMT further includes an active layer over the channel layer. The active layer has a band gap discontinuity with the channel layer.