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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10867792 B1

PDFFull Text
Date of Patent:
Dec. 15, 2020

Filed:

Feb. 18, 2014

High electron mobility transistor (hemt) having an indium-containing layer and method of manufacturing the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Po-Chun Liu, Hsinchu, TW;

Chi-Ming Chen, Zhubei, TW;

Min-Chang Ching, Zhubei, TW;

Chen-Hao Chiang, Jhongli, TW;

Chung-Yi Yu, Hsinchu, TW;

Chung-Chieh Hsu, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Hauptman Ham. L.L.P.

Primary Examiner:

Benjamin P Sandvik

Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/201 (2006.01); H01L 29/10 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 21/0251 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 29/454 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/1066 (2013.01); H01L 29/201 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01);
Abstract

A high electron mobility transistor (HEMT) includes a substrate, and a channel layer over the substrate, wherein and at least one of the channel layer or the active layer comprises indium. The HEMT further includes an active layer over the channel layer. The active layer has a band gap discontinuity with the channel layer.

Find Patent Forward Citations

Liu, Po-Chun. (2020). High electron mobility transistor (hemt) having an indium-containing layer and method of manufacturing the same (U.S. Patent No. 10867792). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10867792

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