The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2020
Filed:
Oct. 23, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Wei Chuang Wu, Tainan, TW;
Ching-Chun Wang, Tainan, TW;
Dun-Nian Yaung, Taipei, TW;
Feng-Chi Hung, Chu-Bei, TW;
Jen-Cheng Liu, Hsin-Chu, TW;
Yen-Ting Chiang, Tainan, TW;
Chun-Yuan Chen, Tainan, TW;
Shen-Hui Hong, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of photodiodes is formed from a front-side of a substrate. A plurality of boundary deep trench isolation (BDTI) trenches having a first depth and a plurality of multiple deep trench isolation (MDTI) trenches having a second depth are formed from a back-side of the substrate. A stack of dielectric layers is formed in the BDTI trenches and the MDTI trenches. A plurality of color filters is formed overlying the stack of dielectric layers corresponding to the plurality of photodiodes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile