The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2020

Filed:

Dec. 11, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Lilly SU, ChuBei, TW;

Pang-Yen Tsai, Jhu-bei, TW;

Tze-Liang Lee, Hsinchu, TW;

Chii-Horng Li, Jhu-Bei, TW;

Yen-Ru Lee, Hsinchu, TW;

Ming-Hua Yu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/04 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823425 (2013.01); H01L 21/823481 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823878 (2013.01); H01L 27/0617 (2013.01); H01L 29/045 (2013.01); H01L 29/0653 (2013.01); H01L 29/0843 (2013.01); H01L 29/66636 (2013.01); H01L 29/66659 (2013.01); H01L 29/7835 (2013.01);
Abstract

A semiconductor device includes a first gate stack over a substrate. The semiconductor device further includes a first epitaxial (epi) material in the substrate on a first side of the first gate stack. The first epi material includes a first upper surface having a first crystal plane. The semiconductor device further includes a second epi material in the substrate on a second side of the first gate stack opposite the first side. The second epi material includes a second upper surface having a second crystal plane, and the first crystal plane is different from the second crystal plane.


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